SI4913DY-T1-GE3
MOSFET 2P-CH 20V 7.1A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4913DY-T1-GE3 is a TrenchFET® P-channel MOSFET array designed for efficient power management. This dual MOSFET offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.1A at 25°C. Featuring a low Rds(on) of 15mOhm at 9.4A and 4.5V Vgs, it minimizes conduction losses. The device operates as a logic-level gate MOSFET, requiring a 4.5V gate-source voltage for optimal performance, with a threshold voltage (Vgs(th)) of 1V at 500µA. Its low gate charge (Qg) of 65nC at 4.5V facilitates faster switching. The SI4913DY-T1-GE3 is housed in an 8-SOIC package, suitable for surface mounting, and is supplied in tape and reel. This component is utilized in applications such as battery management, power switching, and motor control within the automotive and industrial sectors. The maximum power dissipation is 1.1W, with an operating temperature range from -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 9.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 500µA |
| Supplier Device Package | 8-SOIC |
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