SI4913DY-T1-E3
MOSFET 2P-CH 20V 7.1A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4913DY-T1-E3 TrenchFET® MOSFET Array. This 2 P-Channel device features a 20V Vds rating and a continuous drain current of 7.1A at 25°C. Optimized for efficiency, it offers a low Rds(on) of 15mOhm at 9.4A and 4.5V. The device operates with a logic level gate and has a maximum gate charge of 65nC at 4.5V. Encased in an 8-SOIC package, this surface mount component is rated for 1.1W power dissipation and operates within a temperature range of -55°C to 150°C. Commonly found in power management and automotive applications. Supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 9.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 500µA |
| Supplier Device Package | 8-SOIC |
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