SI4910DY-T1-GE3
MOSFET 2N-CH 40V 7.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI4910DY-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 7.6A at 25°C. The device exhibits a low on-resistance (Rds On) of 27mOhm maximum at 6A, 10V, contributing to reduced conduction losses. With a gate charge (Qg) of 32nC maximum at 10V and an input capacitance (Ciss) of 855pF maximum at 20V, it offers optimized switching performance. The SI4910DY-T1-GE3 is packaged in an 8-SOIC (0.154", 3.90mm width) surface mount configuration, rated for a maximum power dissipation of 3.1W and operating within a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in automotive, industrial, and power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 855pF @ 20V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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