SI4908DY-T1-E3
MOSFET 2N-CH 40V 5A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4908DY-T1-E3 is a dual N-channel MOSFET array in an 8-SOIC package. It features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C. The on-resistance (Rds On) is a maximum of 60mOhm at 4.1A and 10V Vgs. Key parameters include a gate charge (Qg) of 12nC (max) at 10V Vgs and input capacitance (Ciss) of 355pF (max) at 20V Vds. This surface-mount component has a maximum power dissipation of 2.75W and operates across a temperature range of -55°C to 150°C. The SI4908DY-T1-E3 is commonly utilized in power management and switching applications across industrial and automotive sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.75W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 355pF @ 20V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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