SI4906DY-T1-GE3
MOSFET 2N-CH 40V 6.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4906DY-T1-GE3 is a dual N-channel MOSFET array in an 8-SOIC package. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 6.6A at 25°C. The low on-resistance of 39mO (max) at 5A, 10V, coupled with a gate charge of 22nC (max) at 10V, makes it suitable for efficient power switching applications. With a maximum power dissipation of 3.1W and an operating temperature range of -55°C to 150°C, this MOSFET array is designed for demanding environments found in industrial, automotive, and consumer electronics. It is supplied in tape and reel packaging for automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 20V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |