SI4906DY-T1-E3
MOSFET 2N-CH 40V 6.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI4906DY-T1-E3 is a dual N-channel power MOSFET array. This component features a 40V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 6.6A at 25°C. The on-resistance (Rds On) is specified at a maximum of 39mOhms for an Id of 5A and Vgs of 10V. With a gate charge (Qg) of 22nC maximum at 10V and input capacitance (Ciss) of 625pF maximum at 20V, this MOSFET array is suitable for efficient switching applications. The device is packaged in an 8-SOIC (0.154", 3.90mm width) format for surface mounting and has a maximum power dissipation of 3.1W. Operating temperature range is -55°C to 150°C. This component finds application in automotive, industrial, and consumer electronics sectors. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 20V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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