SI4904DY-T1-GE3
MOSFET 2N-CH 40V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET array, part number SI4904DY-T1-GE3, features 40V drain-to-source voltage and 8A continuous drain current at 25°C. This dual N-channel device offers a low Rds(on) of 16mOhm at 5A and 10V Vgs. With a gate charge of 85nC (max) at 10V and input capacitance of 2390pF (max) at 20V, it is suitable for demanding power management applications. The device is rated for 3.25W maximum power dissipation and operates across a temperature range of -55°C to 150°C. Packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting, this component is commonly utilized in automotive, industrial, and telecommunications sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.25W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 20V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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