SI4904DY-T1-E3
MOSFET 2N-CH 40V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4904DY-T1-E3 is a dual N-channel MOSFET array in an 8-SOIC package. This device features a 40V drain-to-source breakdown voltage and supports a continuous drain current of 8A at 25°C. With a low on-resistance of 16mOhm maximum at 5A and 10V, it exhibits efficient conduction. The MOSFET array offers a maximum power dissipation of 3.25W and is designed for surface mount applications. Key parameters include a gate charge (Qg) of 85nC at 10V and input capacitance (Ciss) of 2390pF at 20V. Operating temperature range is -55°C to 150°C. This component is suitable for use in automotive and industrial power management applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.25W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 20V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
