SI4900DY-T1-GE3
MOSFET 2N-CH 60V 5.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SI4900DY-T1-GE3, offers a dual N-channel configuration with a Drains-to-Source Voltage (Vdss) of 60V. This device boasts a continuous Drain Current (Id) of 5.3A at 25°C and a low On-Resistance (Rds On) of 58mOhm at 4.3A, 10V. Featuring a logic-level gate, it is suitable for applications requiring efficient switching. The input capacitance (Ciss) is a maximum of 665pF at 15V, and gate charge (Qg) is 20nC at 10V. Dissipating a maximum power of 3.1W, this MOSFET array is housed in an 8-SOIC package and is supplied on tape and reel. Its operating temperature range is -55°C to 150°C. This component finds application in power management, automotive, and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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