SI4834CDY-T1-E3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4834CDY-T1-E3 is a dual N-channel MOSFET array housed in an 8-SOIC package. This surface-mount device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at 25°C, with a maximum power dissipation of 2.9W. The on-resistance (Rds On) is specified at a maximum of 20mOhm at 8A and 10V. Key parameters include a gate charge (Qg) of 25nC (max) at 10V and input capacitance (Ciss) of 950pF (max) at 15V. The threshold voltage (Vgs(th)) is a maximum of 3V at 1mA. This component operates across a temperature range of -55°C to 150°C. The SI4834CDY-T1-E3 is commonly utilized in automotive, consumer electronics, and industrial applications requiring efficient power switching. This device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.9W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
