SI4834BDY-T1-GE3
MOSFET 2N-CH 30V 5.7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4834BDY-T1-GE3, a TrenchFET® series MOSFET array, features two N-channel devices in a compact 8-SOIC package. This surface-mount component offers a 30V drain-to-source voltage and a continuous drain current capability of 5.7A at 25°C. The logic-level gate and a low Rds(on) of 22mOhm at 7.5A and 10V make it suitable for efficient power switching applications. With a maximum power dissipation of 1.1W and a gate charge of 11nC at 4.5V, this Vishay Siliconix device is engineered for performance in energy-efficient designs. Its operating temperature range of -55°C to 150°C ensures reliability across various environments. Commonly utilized in automotive and industrial power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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