SI4834BDY-T1-E3
MOSFET 2N-CH 30V 5.7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4834BDY-T1-E3 is a dual N-channel MOSFET array designed for efficient power management applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.7A at 25°C. The low Rds(on) of 22mOhm at 7.5A and 10V, coupled with a logic level gate, ensures optimized performance in demanding switching scenarios. With a maximum power dissipation of 1.1W and a gate charge (Qg) of 11nC at 4.5V, this MOSFET array is suitable for use in automotive, industrial, and consumer electronics where power conversion and control are critical. The SI4834BDY-T1-E3 is supplied in an 8-SOIC (0.154", 3.90mm Width) package, tape and reel (TR) for automated assembly. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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