SI4830CDY-T1-GE3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® SI4830CDY-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a continuous drain current (Id) of 8A and a drain-to-source voltage (Vdss) of 30V. With a low on-resistance (Rds On) of 20mOhm at 8A and 10V, it minimizes conduction losses. The logic level gate feature simplifies driving from low-voltage microcontrollers. Typical applications include power management in consumer electronics, industrial automation, and automotive systems. The device is packaged in an 8-SOIC surface mount configuration and operates within a temperature range of -55°C to 150°C. Key parameters include a maximum power dissipation of 2.9W, gate charge (Qg) of 25nC, and input capacitance (Ciss) of 950pF.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.9W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |