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SI4830CDY-T1-GE3

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SI4830CDY-T1-GE3

MOSFET 2N-CH 30V 8A 8SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix LITTLE FOOT® SI4830CDY-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a continuous drain current (Id) of 8A and a drain-to-source voltage (Vdss) of 30V. With a low on-resistance (Rds On) of 20mOhm at 8A and 10V, it minimizes conduction losses. The logic level gate feature simplifies driving from low-voltage microcontrollers. Typical applications include power management in consumer electronics, industrial automation, and automotive systems. The device is packaged in an 8-SOIC surface mount configuration and operates within a temperature range of -55°C to 150°C. Key parameters include a maximum power dissipation of 2.9W, gate charge (Qg) of 25nC, and input capacitance (Ciss) of 950pF.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.9W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A
Input Capacitance (Ciss) (Max) @ Vds950pF @ 15V
Rds On (Max) @ Id, Vgs20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-SOIC

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