SI4830CDY-T1-E3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® SI4830CDY-T1-E3 is a 2 N-channel MOSFET array in an 8-SOIC package. This device features a 30V drain-to-source voltage and a continuous drain current of 8A at 25°C. The MOSFETs offer a low on-resistance of 20mOhm maximum at 8A and 10V, with a logic level gate for enhanced drive capability. Key parameters include a gate charge of 25nC maximum and an input capacitance of 950pF maximum. With a power dissipation of 2.9W and an operating temperature range of -55°C to 150°C, this component is suitable for applications in automotive and industrial sectors. The SI4830CDY-T1-E3 is supplied on tape and reel for efficient surface mounting.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.9W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
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