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SI4830CDY-T1-E3

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SI4830CDY-T1-E3

MOSFET 2N-CH 30V 8A 8SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix LITTLE FOOT® SI4830CDY-T1-E3 is a 2 N-channel MOSFET array in an 8-SOIC package. This device features a 30V drain-to-source voltage and a continuous drain current of 8A at 25°C. The MOSFETs offer a low on-resistance of 20mOhm maximum at 8A and 10V, with a logic level gate for enhanced drive capability. Key parameters include a gate charge of 25nC maximum and an input capacitance of 950pF maximum. With a power dissipation of 2.9W and an operating temperature range of -55°C to 150°C, this component is suitable for applications in automotive and industrial sectors. The SI4830CDY-T1-E3 is supplied on tape and reel for efficient surface mounting.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.9W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A
Input Capacitance (Ciss) (Max) @ Vds950pF @ 15V
Rds On (Max) @ Id, Vgs20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 1mA
Supplier Device Package8-SOIC

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