SI4830ADY-T1-GE3
MOSFET 2N-CH 30V 5.7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® Si4830ADY-T1-GE3 is a dual N-channel power MOSFET array designed for efficient switching applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 5.7A at 25°C. The device offers a low on-resistance of 22mOhm maximum at 7.5A and 10V, and utilizes Logic Level Gate technology for compatibility with lower gate drive voltages. With a typical gate charge of 11nC at 4.5V, it is optimized for fast switching performance. The Si4830ADY-T1-GE3 is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount package, suitable for high-density board layouts. This MOSFET array is commonly found in power management solutions, battery-powered devices, and industrial automation systems. It operates within an ambient temperature range of -55°C to 150°C (TJ) and dissipates a maximum power of 1.1W. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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