SI4818DY-T1-GE3
MOSFET 2N-CH 30V 5.3A/7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® series Si4818DY-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a 30V drain-to-source voltage (Vdss) and continuous drain currents of 5.3A and 7A, respectively, for each channel. The device offers a low Rds(on) of 22mOhm at 6.3A and 10V, coupled with a logic-level gate for compatibility with lower voltage control signals. With a gate charge (Qg) of 12nC at 5V, it supports fast switching speeds. This surface-mount device is housed in an 8-SOIC package, ideal for space-constrained designs. The Si4818DY-T1-GE3 is suitable for use in automotive, industrial, and consumer electronics power conversion circuits. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W, 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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