SI4818DY-T1-E3
MOSFET 2N-CH 30V 5.3A/7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® series MOSFET N-Channel array, part number SI4818DY-T1-E3. This device features dual N-channel MOSFETs with a 30V Drain-to-Source Voltage (Vdss). It offers continuous drain currents of 5.3A and 7A at 25°C, with a low Rds(On) of 22mOhm at 6.3A and 10V. The SI4818DY-T1-E3 is designed with a logic level gate, requiring a Vgs(th) of 800mV at 250µA. Maximum power dissipation is specified at 1W and 1.25W, with a gate charge (Qg) of 12nC at 5V. This component is housed in an 8-SOIC package (0.154", 3.90mm width) and is supplied in tape and reel (TR) packaging. It is suitable for applications in consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W, 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
SI4816BDY-T1-E3
MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
SIA817EDJ-T1-GE3
MOSFET P-CH 30V 4.5A PPAK SC70-6
SIA811ADJ-T1-GE3
MOSFET P-CH 20V 4.5A PPAK SC70-6
