SI4816DY-T1-GE3
MOSFET 2N-CH 30V 5.3A/7.7A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix LITTLE FOOT® SI4816DY-T1-GE3 is a dual N-channel MOSFET array with a drain-source voltage (Vdss) of 30V. Each channel features a continuous drain current (Id) of 5.3A and 7.7A (typical) at 25°C. The device offers a low on-resistance (Rds on) of 22mOhm at 6.3A and 10V, and a maximum power dissipation of 1W and 1.25W per channel. This MOSFET array utilizes a logic-level gate drive and has a gate charge (Qg) of 12nC maximum at 5V. The SI4816DY-T1-GE3 is supplied in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. Its configuration as a half-bridge makes it suitable for applications in consumer electronics, industrial automation, and power management solutions. This component is delivered in Tape & Reel packaging.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W, 1.25W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 7.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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