SI4670DY-T1-E3
MOSFET 2N-CH 25V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® series SI4670DY-T1-E3 is a dual N-channel MOSFET with a 25V drain-source voltage and a continuous drain current rating of 8A at 25°C. This device features a logic-level gate, a low Rds(on) of 23mOhm at 7A and 10V, and a maximum power dissipation of 2.8W. Key parameters include a gate charge of 18nC (max) at 10V and an input capacitance of 680pF (max) at 13V. The SI4670DY-T1-E3 is housed in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in applications such as power management and load switching within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.8W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 13V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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