SI4650DY-T1-E3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® Series SI4650DY-T1-E3 is a power MOSFET array featuring two N-channel devices in a half-bridge configuration. This component is designed for demanding applications with a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at 25°C. The device exhibits a low on-resistance (Rds On) of 18mOhm maximum at 8A and 10V, contributing to efficient power delivery. Key parameters include a gate charge (Qg) of 40nC maximum at 10V and input capacitance (Ciss) of 1550pF maximum at 15V. The SI4650DY-T1-E3 is packaged in an 8-SOIC (0.154", 3.90mm width) surface mount configuration, suitable for automated assembly. Maximum power dissipation is 3.1W. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in power management solutions across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 15V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
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