SI4622DY-T1-GE3
MOSFET 2N-CH 30V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SkyFET®, TrenchFET® SI4622DY-T1-GE3 is a 2 N-channel MOSFET array in an 8-SOIC package. This component features a Drain to Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 8A at 25°C. The Rds On is specified at a maximum of 16mOhm at 9.6A, 10V. Key parameters include a Gate Charge (Qg) of 60nC maximum at 10V and an Input Capacitance (Ciss) of 2458pF maximum at 15V. The device supports a maximum power dissipation of 3.3W and 3.1W, with an operating temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in consumer electronics and industrial automation. The part is supplied in Tape & Reel packaging.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.3W, 3.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2458pF @ 15V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 9.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOIC |
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