SI4618DY-T1-GE3
MOSFET 2N-CH 30V 8A/15.2A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4618DY-T1-GE3 is a TrenchFET® MOSFET array featuring two N-channel devices configured as a half-bridge. This component boasts a 30V drain-source voltage rating and supports continuous drain currents of 8A and 15.2A at 25°C, with maximum power dissipation of 1.98W and 4.16W respectively. Key electrical parameters include a maximum Rds(On) of 17mOhm at 8A and 10V, a typical input capacitance (Ciss) of 1535pF at 15V, and a gate charge (Qg) of 44nC at 10V. The device operates across a temperature range of -55°C to 150°C and is supplied in an 8-SOIC surface mount package. This MOSFET array is suitable for applications in power management and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.98W, 4.16W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 15.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1535pF @ 15V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOIC |
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