SI4618DY-T1-E3
MOSFET 2N-CH 30V 8A/15.2A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4618DY-T1-E3 TrenchFET® MOSFET array featuring two N-channel devices in a 2 N-Channel (Half Bridge) configuration. This 30V device offers continuous drain currents of 8A and 15.2A, with a maximum on-resistance of 17mOhm at 8A and 10V. The SI4618DY-T1-E3 operates with a gate threshold voltage of 2.5V (max) at 1mA and a gate charge of 44nC (max) at 10V, supported by an input capacitance of 1535pF (max) at 15V. Power dissipation is rated at 1.98W and 4.16W. Mounted in an 8-SOIC package, this component is suitable for applications in the automotive and industrial sectors. The operating temperature range is -55°C to 150°C (TJ). The component is supplied on a Tape & Reel (TR) for efficient automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.98W, 4.16W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 15.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1535pF @ 15V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOIC |
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