SI4590DY-T1-GE3
MOSFET N/P-CH 100V 3.4A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4590DY-T1-GE3 TrenchFET® MOSFET Array. This device offers a 100V Drain-to-Source Voltage (Vdss) with continuous drain current ratings of 3.4A and 2.8A for the N-channel and P-channel respectively. The N-channel MOSFET features a maximum Rds(On) of 57mOhm at 2A, 10V, while the P-channel exhibits a comparable low on-resistance. Key parameters include a gate charge of 11.5nC (Max) and input capacitance of 360pF (Max). The device is packaged in an 8-SOIC (0.154", 3.90mm Width) form factor, suitable for surface mounting. Power dissipation is rated at 2.4W for the N-channel and 3.4W for the P-channel. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in applications such as power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | - |
| Power - Max | 2.4W, 3.4W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 50V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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