SI4569DY-T1-GE3
MOSFET N/P-CH 40V 7.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix presents the SI4569DY-T1-GE3, a TrenchFET® MOSFET array featuring both N-channel and P-channel configurations. This component is rated for a 40V drain-to-source voltage and offers continuous drain current capabilities of 7.6A for the N-channel and 7.9A for the P-channel, both at 25°C. With a maximum on-resistance (Rds(on)) of 27mOhm at 6A and 10V, it delivers efficient power handling up to 3.1W (N-channel) and 3.2W (P-channel). The device is housed in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. Key electrical parameters include a gate charge (Qg) of 32nC at 10V and input capacitance (Ciss) of 855pF at 20V. The SI4569DY-T1-GE3 finds application in power management solutions across various industries. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W, 3.2W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A, 7.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 855pF @ 20V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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