SI4569DY-T1-E3
MOSFET N/P-CH 40V 7.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4569DY-T1-E3 is a TrenchFET® series MOSFET array featuring N-channel and P-channel configurations. This component offers a 40V Drain-to-Source voltage (Vdss) with continuous drain current capabilities of 7.6A and 7.9A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 27mOhms at 6A and 10V. Key parameters include a Gate Charge (Qg) of 32nC (max) at 10V and an Input Capacitance (Ciss) of 855pF (max) at 20V. The power dissipation is rated at 3.1W and 3.2W. Supplied in an 8-SOIC package, the SI4569DY-T1-E3 is designed for surface mounting and operates across a wide temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive and industrial power management systems. The component is provided in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W, 3.2W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A, 7.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 855pF @ 20V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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