SI4567DY-T1-E3
MOSFET N/P-CH 40V 5A/4.4A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI4567DY-T1-E3, features complementary N-channel and P-channel MOSFETs in a 40V breakdown voltage rating. This device offers a continuous drain current of 5A for the N-channel and 4.4A for the P-channel, with a maximum power dissipation of 2.75W and 2.95W respectively. The N-channel MOSFET exhibits a low Rds(on) of 60mOhm at 4.1A and 10V Vgs. The array is housed in a standard 8-SOIC package suitable for surface mounting. Key electrical parameters include a gate charge of 12nC (max) at 10V and input capacitance of 355pF (max) at 20V Vds. Operating temperature range is -55°C to 150°C. This component is utilized in power management applications across various industries including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.75W, 2.95W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5A, 4.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 355pF @ 20V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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