SI4565ADY-T1-GE3
MOSFET N/P-CH 40V 6.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI4565ADY-T1-GE3 MOSFET Array in an 8-SOIC package. This device features N and P-channel MOSFETs with a 40V drain-to-source voltage (Vdss). Continuous drain current (Id) at 25°C is rated at 6.6A for the N-channel and 5.6A for the P-channel. The array exhibits a maximum on-resistance (Rds On) of 39mOhm at 5A and 10V Vgs. Key parameters include a maximum gate charge (Qg) of 22nC at 10V and input capacitance (Ciss) of 625pF at 20V Vds. Power dissipation is limited to 3.1W. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management, battery management, and power distribution applications. The SI4565ADY-T1-GE3 is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A, 5.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 20V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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