SI4565ADY-T1-E3
MOSFET N/P-CH 40V 6.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array, part number SI4565ADY-T1-E3, offers a 40V drain-to-source voltage with continuous drain currents of 6.6A and 5.6A. This N and P-Channel device is housed in an 8-SOIC package, suitable for surface mount applications. Key parameters include a maximum power dissipation of 3.1W, a low Rds(On) of 39mOhm at 5A and 10V, and a gate charge of 22nC at 10V. The input capacitance (Ciss) is a maximum of 625pF at 20V, with a gate threshold voltage (Vgs(th)) of 2.2V at 250µA. Operating across a temperature range of -55°C to 150°C, this MOSFET array is commonly employed in power management and battery charging solutions within the consumer electronics and industrial automation sectors. The component is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A, 5.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 20V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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