SI4563DY-T1-GE3
MOSFET N/P-CH 40V 8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI4563DY-T1-GE3, features N and P-channel configurations within an 8-SOIC package. This surface-mount device offers a continuous drain current of 8A per channel at 25°C and a drain-to-source voltage of 40V. The device exhibits a maximum Rds(On) of 16mOhm at 5A and 10V, with a gate charge of 85nC at 10V. Input capacitance (Ciss) is specified at a maximum of 2390pF at 20V. With a power dissipation of 3.25W, it operates across a temperature range of -55°C to 150°C. This component is suitable for applications in automotive and industrial power management. The SI4563DY-T1-GE3 is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.25W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 20V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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