SI4562DY-T1-E3
MOSFET N/P-CH 20V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4562DY-T1-E3 is a N- and P-channel MOSFET array with a drain-to-source voltage of 20V. This component features logic-level gate operation and a maximum power dissipation of 2W. The R<sub>DS(on)</sub> is specified at 25mOhm for a drain current of 7.1A and gate-source voltage of 4.5V. Key parameters include a gate charge (Qg) of 50nC maximum at 4.5V and a threshold voltage (V<sub>GS(th)</sub>) of 1.6V maximum at 250µA. The device is housed in an 8-SOIC package, measuring 3.90mm in width, and is supplied on tape and reel. It is suitable for applications in power management and consumer electronics, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
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