SI4561DY-T1-GE3
MOSFET N/P-CH 40V 6.8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI4561DY-T1-GE3, offers a complementary N-channel and P-channel configuration within an 8-SOIC package. This device supports a Drain-to-Source Voltage (Vdss) of 40V, with continuous drain current ratings of 6.8A for the N-channel and 7.2A for the P-channel at 25°C. Key performance parameters include a maximum Rds(On) of 35.5mOhm at 5A, 10V, and a low gate charge of 20nC at 10V. The component features a logic-level gate and is rated for a maximum power dissipation of 3W and 3.3W. Operating across a temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics, industrial power management, and automotive systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W, 3.3W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A, 7.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 20V |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |