SI4559ADY-T1-GE3
MOSFET N/P-CH 60V 5.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI4559ADY-T1-GE3 is a TrenchFET® MOSFET array featuring N-channel and P-channel configurations. This device offers a Drain-to-Source Voltage (Vdss) of 60V. Continuous drain current capabilities are 5.3A for the N-channel and 3.9A for the P-channel at 25°C. The MOSFET array is designed for surface mounting within an 8-SOIC package, providing a maximum power dissipation of 3.1W for the N-channel and 3.4W for the P-channel. Key electrical specifications include a low Rds(On) of 58mOhm at 4.3A, 10V, and a Logic Level Gate feature. Input capacitance (Ciss) is specified at 665pF (N-channel) and 650pF (P-channel) maximum at 15V, with a maximum gate charge (Qg) of 20nC and 22nC respectively at 10V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power management and various high-density electronic systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W, 3.4W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 3.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V, 650pF @ 15V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V, 22nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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