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SI4559ADY-T1-E3

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SI4559ADY-T1-E3

MOSFET N/P-CH 60V 5.3A 8SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix SI4559ADY-T1-E3 is a TrenchFET® MOSFET array featuring complementary N-channel and P-channel devices in a single 8-SOIC package. This component offers a 60V drain-to-source breakdown voltage. The N-channel device supports a continuous drain current of 5.3A at 25°C with a maximum Rds(on) of 58mOhm at 4.3A and 10V Vgs. The P-channel device provides 3.9A continuous drain current with similar Rds(on) characteristics. Key parameters include logic level gate operation, low gate charge (Qg) of 20nC (N-ch) and 22nC (P-ch) at 10V Vgs, and input capacitance (Ciss) of 665pF (N-ch) and 650pF (P-ch) at 15V Vds. Maximum power dissipation is 3.1W for the N-channel and 3.4W for the P-channel device. Operating temperature range is -55°C to 150°C. This MOSFET array is suitable for applications in power management, battery charging, and general switching within the consumer electronics and industrial sectors. Supplied in Tape & Reel (TR) packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max3.1W, 3.4W
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.3A, 3.9A
Input Capacitance (Ciss) (Max) @ Vds665pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V, 22nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC

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