SI4559ADY-T1-E3
MOSFET N/P-CH 60V 5.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI4559ADY-T1-E3 is a TrenchFET® MOSFET array featuring complementary N-channel and P-channel devices in a single 8-SOIC package. This component offers a 60V drain-to-source breakdown voltage. The N-channel device supports a continuous drain current of 5.3A at 25°C with a maximum Rds(on) of 58mOhm at 4.3A and 10V Vgs. The P-channel device provides 3.9A continuous drain current with similar Rds(on) characteristics. Key parameters include logic level gate operation, low gate charge (Qg) of 20nC (N-ch) and 22nC (P-ch) at 10V Vgs, and input capacitance (Ciss) of 665pF (N-ch) and 650pF (P-ch) at 15V Vds. Maximum power dissipation is 3.1W for the N-channel and 3.4W for the P-channel device. Operating temperature range is -55°C to 150°C. This MOSFET array is suitable for applications in power management, battery charging, and general switching within the consumer electronics and industrial sectors. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W, 3.4W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 3.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V, 650pF @ 15V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V, 22nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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