SI4544DY-T1-GE3
MOSFET N/P-CH 30V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix SI4544DY-T1-GE3 is a TrenchFET® technology MOSFET array featuring both N-channel and P-channel devices with a common drain configuration. This component offers a Drain-to-Source Voltage (Vdss) of 30V and a maximum continuous drain current capability of 6.5A with a low Rds(On) of 35mOhm at 10V Vgs. Designed for surface mounting, it is housed in an 8-SOIC package. Key electrical characteristics include a maximum gate charge (Qg) of 35nC at 10V and a minimum gate threshold voltage (Vgs(th)) of 1V at 250µA. The device operates within a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in power management, battery charging, and high-efficiency switching circuits across various industrial sectors. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
