SI4544DY-T1-E3
MOSFET N/P-CH 30V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array SI4544DY-T1-E3 offers a complementary N-channel and P-channel configuration in a common drain arrangement, packaged in an 8-SOIC surface-mount case. This device features a Drain-to-Source Voltage (Vdss) rating of 30V and a maximum continuous drain current capability of 6.5A at 10V Vgs, with a low on-resistance of 35mOhm. The logic-level gate ensures compatibility with lower voltage gate drive signals. With a maximum power dissipation of 2.4W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in power management, battery-powered devices, and automotive systems. The SI4544DY-T1-E3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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