SI4542DY-T1-GE3
MOSFET N/P-CH 30V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4542DY-T1-GE3 is a N and P-Channel MOSFET array designed for demanding applications. This surface mount device features a 30V drain-to-source voltage (Vdss) and a maximum power dissipation of 2W. With a low Rds(On) of 25mOhm at 6.9A and 10V, it offers efficient power switching. The logic level gate simplifies drive requirements, and it boasts a gate charge (Qg) of 50nC at 10V. Packaged in an 8-SOIC (0.154", 3.90mm Width) and supplied on tape and reel, this component is suitable for use in power management, automotive, and industrial control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
