SI4542DY-T1-E3
MOSFET N/P-CH 30V 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array, part number SI4542DY-T1-E3, features a dual N-channel and P-channel configuration with a 30V drain-to-source voltage. This surface mount device, housed in an 8-SOIC package, offers a maximum power dissipation of 2W. The N-channel MOSFET exhibits a low Rds(on) of 25mOhm at 6.9A and 10V Vgs, with a logic level gate for efficient drive. The P-channel MOSFET also operates efficiently within its specified parameters. Key electrical characteristics include a maximum gate charge of 50nC at 10V for the N-channel. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management applications across automotive and industrial sectors. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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