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SI4539ADY-T1-GE3

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SI4539ADY-T1-GE3

MOSFET N/P-CH 30V 4.4A 8SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI4539ADY-T1-GE3 is a MOSFET array featuring N and P-channel transistors in a 30V configuration. This component offers a continuous drain current of 4.4A and 3.7A respectively, with a maximum power dissipation of 1.1W. The device utilizes a logic level gate for enhanced control and exhibits a low on-resistance of 36mOhm at 5.9A and 10V. Manufactured using advanced MOSFET technology, it is presented in an 8-SOIC package suitable for surface mounting. The operating temperature range is -55°C to 150°C. This component is commonly employed in automotive and industrial applications requiring efficient power switching.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.1W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device Package8-SOIC

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