SI4539ADY-T1-GE3
MOSFET N/P-CH 30V 4.4A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI4539ADY-T1-GE3 is a MOSFET array featuring N and P-channel transistors in a 30V configuration. This component offers a continuous drain current of 4.4A and 3.7A respectively, with a maximum power dissipation of 1.1W. The device utilizes a logic level gate for enhanced control and exhibits a low on-resistance of 36mOhm at 5.9A and 10V. Manufactured using advanced MOSFET technology, it is presented in an 8-SOIC package suitable for surface mounting. The operating temperature range is -55°C to 150°C. This component is commonly employed in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A, 3.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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