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SI4539ADY-T1-E3

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SI4539ADY-T1-E3

MOSFET N/P-CH 30V 4.4A 8SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® MOSFET array, part number SI4539ADY-T1-E3, features N-channel and P-channel configurations in a compact 8-SOIC package. This component offers a 30V drain-to-source voltage rating with continuous drain currents of 4.4A for the N-channel and 3.7A for the P-channel, both specified at 25°C. The array boasts a low Rds(on) of 36mOhm maximum for the N-channel at 5.9A and 10V. Logic level gate operation and a maximum gate charge of 20nC at 10V are key performance characteristics. Dissipation power is rated at 1.1W, and the device operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive, industrial, and power management sectors. Packaging is on a tape and reel.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.1W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device Package8-SOIC

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