SI4539ADY-T1-E3
MOSFET N/P-CH 30V 4.4A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET array, part number SI4539ADY-T1-E3, features N-channel and P-channel configurations in a compact 8-SOIC package. This component offers a 30V drain-to-source voltage rating with continuous drain currents of 4.4A for the N-channel and 3.7A for the P-channel, both specified at 25°C. The array boasts a low Rds(on) of 36mOhm maximum for the N-channel at 5.9A and 10V. Logic level gate operation and a maximum gate charge of 20nC at 10V are key performance characteristics. Dissipation power is rated at 1.1W, and the device operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive, industrial, and power management sectors. Packaging is on a tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A, 3.7A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
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