SI4534DY-T1-GE3
MOSFET N/P-CH 60V 6.2A/8A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SI4534DY-T1-GE3, features N- and P-channel configurations within a surface-mount 8-SOIC package. This device offers a 60V drain-to-source voltage. Continuous drain current capabilities are rated at 6.2A for the N-channel and 3A for the P-channel, both measured at 25°C ambient temperature. Continuous drain current at case temperature is 8A for the N-channel and 4.1A for the P-channel. Maximum power dissipation is 2W (ambient) and 3.6W (case) for the N-channel. On-resistance (Rds On) is specified as 29mOhm at 5A, 10V for the N-channel and 120mOhm at 3.1A, 10V for the P-channel. Gate charge (Qg) is 11nC maximum for the N-channel and 22nC maximum for the P-channel, both at 10V Vgs. Input capacitance (Ciss) is 420pF maximum for the N-channel and 650pF maximum for the P-channel, both at 30V Vds. This component is suitable for applications in automotive and industrial sectors. The device operates from -55°C to 150°C (TJ) and is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta), 3.6W (Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 30V, 650pF @ 30V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V, 22nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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