SI4532ADY-T1-GE3
MOSFET N/P-CH 30V 3.7A/3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array SI4532ADY-T1-GE3. This N-channel and P-channel device features a 30V drain-source voltage and continuous drain currents of 3.7A for the N-channel and 3A for the P-channel at 25°C. It offers a low Rds(on) of 53mOhm maximum at 4.9A, 10V. The array operates with a logic level gate and has a gate charge of 16nC maximum. Power dissipation is rated at 1.13W for the N-channel and 1.2W for the P-channel. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration and supplied on tape and reel, this component is suitable for applications in consumer electronics and industrial power management. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.13W, 1.2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A, 3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 4.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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