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SI4532ADY-T1-E3

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SI4532ADY-T1-E3

MOSFET N/P-CH 30V 3.7A/3A 8SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® N/P-Channel MOSFET Array, part number SI4532ADY-T1-E3, offers a complementary pair of N-channel and P-channel devices in a 30V breakdown voltage rating. This MOSFET array features a low on-resistance of 53mOhm at 4.9A and 10V for the N-channel, and a corresponding specification for the P-channel. Designed for efficient power switching, it supports continuous drain currents of 3.7A for the N-channel and 3A for the P-channel at 25°C. The device utilizes a logic-level gate drive and has a maximum gate charge of 16nC at 10V. Packaged in an 8-SOIC (0.154" width) for surface mounting, it is supplied on tape and reel. Typical applications include power management and load switching in computing, industrial, and consumer electronics. The SI4532ADY-T1-E3 operates within an ambient temperature range of -55°C to 150°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.13W, 1.2W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.7A, 3A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device Package8-SOIC

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