SI4511DY-T1-GE3
MOSFET N/P-CH 20V 7.2A 8-SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI4511DY-T1-GE3 is a MOSFET array featuring both N-channel and P-channel devices. Each channel is rated for a 20V drain-to-source voltage. The N-channel MOSFET offers a continuous drain current of 7.2A, while the P-channel MOSFET supports 4.6A, both at 25°C. This device utilizes MOSFET technology and is housed in an 8-SOIC package for surface mounting. Key specifications include a logic-level gate, a maximum power dissipation of 1.1W, and a typical gate charge of 18nC at 4.5V Vgs. The on-resistance (Rds On) is 14.5mOhm at 9.6A and 10V Vgs for the N-channel device. This component is commonly employed in power management applications across various industries. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A, 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 9.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |