SI4511DY-T1-E3
MOSFET N/P-CH 20V 7.2A 8-SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET N/P-CH 20V 7.2A 8-SOIC, part number SI4511DY-T1-E3, is a dual MOSFET array featuring N-channel and P-channel transistors. This component is rated for a continuous drain current of 7.2A for the N-channel and 4.6A for the P-channel, with a drain-to-source voltage of 20V. It utilizes Metal Oxide technology and a logic level gate for efficient switching. The device offers a low on-resistance of 14.5mOhm maximum at 9.6A and 10V Vgs. With a gate charge of 18nC maximum at 4.5V Vgs, it is suitable for applications requiring fast switching. The SI4511DY-T1-E3 is packaged in an 8-SOIC surface mount configuration and delivers a maximum power dissipation of 1.1W. This component finds application in power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A, 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 9.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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