SI4501BDY-T1-GE3
MOSFET N/P-CH 30V/8V 12A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Vishay Siliconix SI4501BDY-T1-GE3 is a TrenchFET® MOSFET array featuring N-channel and P-channel devices with a common drain configuration. This component is rated for 30V for the N-channel and 8V for the P-channel drain-to-source voltage. Continuous drain current capabilities are 12A for the N-channel and 8A for the P-channel at 25°C, with maximum power dissipation of 4.5W and 3.1W respectively. The N-channel device exhibits a low Rds(on) of 17mOhm at 10A and 10V. It incorporates logic level gate functionality. The device is supplied in an 8-SOIC package designed for surface mounting and is available on tape and reel. Operating temperature ranges from -55°C to 150°C. This MOSFET array finds application in power management solutions across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.5W, 3.1W |
| Drain to Source Voltage (Vdss) | 30V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 12A, 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 805pF @ 15V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
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