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SI4501BDY-T1-GE3

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SI4501BDY-T1-GE3

MOSFET N/P-CH 30V/8V 12A 8SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Vishay Siliconix SI4501BDY-T1-GE3 is a TrenchFET® MOSFET array featuring N-channel and P-channel devices with a common drain configuration. This component is rated for 30V for the N-channel and 8V for the P-channel drain-to-source voltage. Continuous drain current capabilities are 12A for the N-channel and 8A for the P-channel at 25°C, with maximum power dissipation of 4.5W and 3.1W respectively. The N-channel device exhibits a low Rds(on) of 17mOhm at 10A and 10V. It incorporates logic level gate functionality. The device is supplied in an 8-SOIC package designed for surface mounting and is available on tape and reel. Operating temperature ranges from -55°C to 150°C. This MOSFET array finds application in power management solutions across various industries.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 63 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel, Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max4.5W, 3.1W
Drain to Source Voltage (Vdss)30V, 8V
Current - Continuous Drain (Id) @ 25°C12A, 8A
Input Capacitance (Ciss) (Max) @ Vds805pF @ 15V
Rds On (Max) @ Id, Vgs17mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package8-SOIC

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