SI4501ADY-T1-GE3
MOSFET N/P-CH 30V/8V 6.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET Array SI4501ADY-T1-GE3 is a TrenchFET® series component featuring N and P-channel configurations with a common drain. This device offers a Drain to Source Voltage (Vdss) of 30V for the N-channel and 8V for the P-channel. Continuous Drain Current (Id) at 25°C is rated at 6.3A for the N-channel and 4.1A for the P-channel. The MOSFET array has a logic-level gate feature, with a typical Gate Charge (Qg) of 20nC at 5V. On-resistance (Rds On) is a maximum of 18mOhm at 8.8A and 10V. Power dissipation is 1.3W, and it operates within an ambient temperature range of -55°C to 150°C. The component is supplied in an 8-SOIC package, measuring 0.154" (3.90mm) in width, and is available on tape and reel. This device finds application in power management solutions across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 30V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A, 4.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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