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SI4501ADY-T1-GE3

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SI4501ADY-T1-GE3

MOSFET N/P-CH 30V/8V 6.3A 8SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix MOSFET Array SI4501ADY-T1-GE3 is a TrenchFET® series component featuring N and P-channel configurations with a common drain. This device offers a Drain to Source Voltage (Vdss) of 30V for the N-channel and 8V for the P-channel. Continuous Drain Current (Id) at 25°C is rated at 6.3A for the N-channel and 4.1A for the P-channel. The MOSFET array has a logic-level gate feature, with a typical Gate Charge (Qg) of 20nC at 5V. On-resistance (Rds On) is a maximum of 18mOhm at 8.8A and 10V. Power dissipation is 1.3W, and it operates within an ambient temperature range of -55°C to 150°C. The component is supplied in an 8-SOIC package, measuring 0.154" (3.90mm) in width, and is available on tape and reel. This device finds application in power management solutions across automotive and industrial sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel, Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.3W
Drain to Source Voltage (Vdss)30V, 8V
Current - Continuous Drain (Id) @ 25°C6.3A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs18mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.8V @ 250µA
Supplier Device Package8-SOIC

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