SI4501ADY-T1-E3
MOSFET N/P-CH 30V/8V 6.3A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SI4501ADY-T1-E3, features an N-channel and P-channel configuration with a common drain. This device offers a 30V drain-to-source voltage for the N-channel and 8V for the P-channel. Continuous drain current capabilities are 6.3A for the N-channel and 4.1A for the P-channel at 25°C. It boasts a low Rds(on) of 18mOhm at 8.8A and 10V for the N-channel. The logic-level gate design simplifies control, with Vgs(th) max at 1.8V @ 250µA. Input capacitance (Ciss) is not specified. The 8-SOIC package is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This component is utilized in power management and switching applications. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 30V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A, 4.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-SOIC |
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