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SI4500BDY-T1-GE3

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SI4500BDY-T1-GE3

MOSFET N/P-CH 20V 6.6A 8-SOIC

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix MOSFET Array, part number SI4500BDY-T1-GE3, features a dual N-channel and P-channel configuration with a common drain. This component offers a Drain to Source Voltage (Vdss) of 20V and continuous drain current ratings of 6.6A for the N-channel and 3.8A for the P-channel at 25°C. The MOSFET Array utilizes Metal Oxide technology and is designed with a logic level gate, exhibiting a gate charge (Qg) of 17nC at 4.5V. With a low on-resistance of 20mOhm at 9.1A and 4.5V, it provides efficient power switching. The device is packaged in an 8-SOIC (0.154", 3.90mm width) format, suitable for surface mounting, and supplied in Cut Tape (CT). This Vishay Siliconix component is commonly employed in power management applications across various industries, including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: UnknownPackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel, Common Drain
TechnologyMOSFET (Metal Oxide)
Power - Max1.3W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs20mOhm @ 9.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-SOIC

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