SI4500BDY-T1-GE3
MOSFET N/P-CH 20V 6.6A 8-SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix MOSFET Array, part number SI4500BDY-T1-GE3, features a dual N-channel and P-channel configuration with a common drain. This component offers a Drain to Source Voltage (Vdss) of 20V and continuous drain current ratings of 6.6A for the N-channel and 3.8A for the P-channel at 25°C. The MOSFET Array utilizes Metal Oxide technology and is designed with a logic level gate, exhibiting a gate charge (Qg) of 17nC at 4.5V. With a low on-resistance of 20mOhm at 9.1A and 4.5V, it provides efficient power switching. The device is packaged in an 8-SOIC (0.154", 3.90mm width) format, suitable for surface mounting, and supplied in Cut Tape (CT). This Vishay Siliconix component is commonly employed in power management applications across various industries, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A, 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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