SI4500BDY-T1-E3
MOSFET N/P-CH 20V 6.6A 8SOICManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET Array, N and P-Channel, Common Drain, Part Number SI4500BDY-T1-E3. This 20V device features a logic level gate and a low Rds(on) of 20mOhm at 9.1A and 4.5V Vgs. Continuous drain current capabilities are 6.6A and 3.8A for the N-channel and P-channel respectively, with a maximum power dissipation of 1.3W. The 8-SOIC package is suitable for surface mounting and is supplied in cut tape. This component is widely utilized in power management applications within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A, 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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